JAN2N3765
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- Mfr.Part #
- JAN2N3765
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 1.5A TO46
- Stock
- 32,701
- In Stock ：
- 32,701
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 1.5 A
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 200°C (TJ)
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 100mA, 1A
- Package :
- Bulk
- Current - Collector Cutoff (Max) :
- 100µA (ICBO)
- Frequency - Transition :
- -
- Supplier Device Package :
- TO-46 (TO-206AB)
- Power - Max :
- 500 mW
- Series :
- Military, MIL-PRF-19500/396
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA, 1V
- Product Status :
- Active
- Datasheets
- JAN2N3765
PNP -55°C ~ 200°C (TJ) 100µA (ICBO) TO-206AB, TO-46-3 Metal Can Through Hole
JAN2N3765 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 500mA, 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 900mV @ 100mA, 1A.The product comes in the supplier device package of TO-46 (TO-206AB).A 60 V maximal voltage - Collector Emitter Breakdown is present in the device.
JAN2N3765 Features
the DC current gain for this device is 40 @ 500mA, 1V
the vce saturation(Max) is 900mV @ 100mA, 1A
the supplier device package of TO-46 (TO-206AB)
JAN2N3765 Applications
There are a lot of Microchip
JAN2N3765 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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