JAN2N3764
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- Mfr.Part #
- JAN2N3764
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 40V 1.5A TO46
- Stock
- 2,768
- In Stock ：
- 2,768
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 100mA, 1A
- Factory Lead Time :
- 20 Weeks
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mount :
- Through Hole
- Max Collector Current :
- 1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 1A 1.5V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Series :
- Military, MIL-PRF-19500/396
- Collector Base Voltage (VCBO) :
- 40V
- Collector Emitter Voltage (VCEO) :
- 40V
- Configuration :
- Single
- HTS Code :
- 8541.21.00.95
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Qualification Status :
- Qualified
- JESD-609 Code :
- e0
- Max Power Dissipation :
- 500mW
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- Power - Max :
- 500mW
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Number of Elements :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Through Hole
- Published :
- 2002
- Terminal Form :
- Wire
- Turn Off Time-Max (toff) :
- 115ns
- Reference Standard :
- MIL-19500
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Transistor Type :
- PNP
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -55°C~200°C TJ
- Datasheets
- JAN2N3764
PNP -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JAN2N3764 Overview
In this device, the DC current gain is 30 @ 1A 1.5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 900mV @ 100mA, 1A.Maximum collector currents can be below 1.5A volts.
JAN2N3764 Features
the DC current gain for this device is 30 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
JAN2N3764 Applications
There are a lot of Microsemi Corporation
JAN2N3764 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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