JAN2N3762
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- Mfr.Part #
- JAN2N3762
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 40V 1.5A TO39
- Stock
- 23,609
- In Stock ：
- 23,609
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- Radiation Hardening :
- No
- JESD-609 Code :
- e0
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Qualification Status :
- Qualified
- Collector Emitter Voltage (VCEO) :
- 40V
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Max Power Dissipation :
- 1W
- Transistor Type :
- PNP
- Published :
- 2002
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 1A 1.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~200°C TJ
- Configuration :
- Single
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 100mA, 1A
- Factory Lead Time :
- 22 Weeks
- Power Dissipation :
- 1W
- Case Connection :
- COLLECTOR
- Series :
- Military, MIL-PRF-19500/396
- Number of Elements :
- 1
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Pin Count :
- 2
- Max Collector Current :
- 1.5A
- Packaging :
- Bulk
- Terminal Form :
- Wire
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- JAN2N3762
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PNP -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3762 Overview
This device has a DC current gain of 30 @ 1A 1.5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 900mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 1.5A volts is possible.
JAN2N3762 Features
the DC current gain for this device is 30 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
the emitter base voltage is kept at 5V
JAN2N3762 Applications
There are a lot of Microsemi Corporation
JAN2N3762 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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