JAN2N3741
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- Mfr.Part #
- JAN2N3741
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A TO66
- Stock
- 17,769
- In Stock ：
- 17,769
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Series :
- Military, MIL-PRF-19500/441
- Pin Count :
- 2
- Package / Case :
- TO-213AA, TO-66-2
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Form :
- PIN/PEG
- Current - Collector Cutoff (Max) :
- 10μA
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 7V
- Mount :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 250mA 1V
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- RoHS Status :
- Non-RoHS Compliant
- Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 80V
- JESD-30 Code :
- O-MBFM-P2
- Factory Lead Time :
- 22 Weeks
- Transistor Type :
- PNP
- Qualification Status :
- Qualified
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Pins :
- 3
- Number of Terminations :
- 2
- Published :
- 2007
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Power Dissipation :
- 25W
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 125mA, 1A
- Radiation Hardening :
- No
- Power Dissipation :
- 25W
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 4A
- Datasheets
- JAN2N3741
PNP -65°C~200°C TJ 10μA 1 Elements 2 Terminations SILICON PNP TO-213AA, TO-66-2 Bulk Through Hole
JAN2N3741 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 250mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 125mA, 1A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Collector current can be as low as 4A volts at its maximum.
JAN2N3741 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 125mA, 1A
the emitter base voltage is kept at 7V
JAN2N3741 Applications
There are a lot of Microsemi Corporation
JAN2N3741 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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