JAN2N3740
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- Mfr.Part #
- JAN2N3740
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS PNP 60V 4A TO66
- Stock
- 28,388
- In Stock ：
- 28,388
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -65°C~200°C TJ
- Packaging :
- Bulk
- Qualification Status :
- Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 125mA, 1A
- Radiation Hardening :
- No
- Pbfree Code :
- No
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Reference Standard :
- MIL-19500/441
- Max Power Dissipation :
- 25W
- Collector Emitter Voltage (VCEO) :
- 60V
- Current - Collector Cutoff (Max) :
- 10μA
- Collector Base Voltage (VCBO) :
- 60V
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/441
- Power - Max :
- 25W
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- HTS Code :
- 8541.29.00.95
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 250mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Terminal Form :
- PIN/PEG
- Max Collector Current :
- 4A
- Pin Count :
- 2
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Package / Case :
- TO-213AA, TO-66-2
- Polarity/Channel Type :
- PNP
- Case Connection :
- COLLECTOR
- JESD-30 Code :
- O-MBFM-P2
- Configuration :
- Single
- JESD-609 Code :
- e0
- Factory Lead Time :
- 22 Weeks
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- ECCN Code :
- EAR99
- Datasheets
- JAN2N3740
PNP -65°C~200°C TJ 10μA 1 Elements 2 Terminations SILICON PNP TO-213AA, TO-66-2 Bulk Through Hole
JAN2N3740 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 250mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 125mA, 1A.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
JAN2N3740 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 125mA, 1A
JAN2N3740 Applications
There are a lot of Microsemi Corporation
JAN2N3740 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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