JAN2N3737UB
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- Mfr.Part #
- JAN2N3737UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A 3UB
- Stock
- 13,009
- In Stock ：
- 13,009
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Position :
- Dual
- JESD-609 Code :
- e0
- Packaging :
- Bulk
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 500mW
- Turn Off Time-Max (toff) :
- 60ns
- Pbfree Code :
- No
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -65°C~200°C TJ
- Factory Lead Time :
- 23 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 100mA, 1A
- Collector Base Voltage (VCBO) :
- 75V
- Collector Emitter Voltage (VCEO) :
- 900mV
- Transistor Type :
- NPN
- Qualification Status :
- Qualified
- Configuration :
- Single
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1A 1.5V
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- JEDEC-95 Code :
- TO-46
- Package / Case :
- 3-SMD, No Lead
- Collector Emitter Breakdown Voltage :
- 40V
- ECCN Code :
- EAR99
- HTS Code :
- 8541.21.00.95
- Max Collector Current :
- 1.5A
- Turn On Time-Max (ton) :
- 48ns
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Series :
- Military, MIL-PRF-19500/395
- Published :
- 2007
- Power - Max :
- 500mW
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- RoHS Status :
- Non-RoHS Compliant
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Datasheets
- JAN2N3737UB
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
JAN2N3737UB Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 1A 1.5V.When VCE saturation is 900mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).A maximum collector current of 1.5A volts can be achieved.
JAN2N3737UB Features
the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
JAN2N3737UB Applications
There are a lot of Microsemi Corporation
JAN2N3737UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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