JAN2N3735
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- Mfr.Part #
- JAN2N3735
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A TO39
- Stock
- 6,252
- In Stock ：
- 6,252
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Military, MIL-PRF-19500/395
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 900mV
- JESD-609 Code :
- e0
- Number of Pins :
- 3
- Pbfree Code :
- No
- HTS Code :
- 8541.29.00.95
- Packaging :
- Bulk
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1A 1.5V
- Configuration :
- Single
- Turn Off Time-Max (toff) :
- 60ns
- RoHS Status :
- Non-RoHS Compliant
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Emitter Breakdown Voltage :
- 40V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Power - Max :
- 1W
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 1.5A
- Published :
- 2007
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 100mA, 1A
- Terminal Form :
- Wire
- Terminal Position :
- BOTTOM
- Turn On Time-Max (ton) :
- 48ns
- Collector Base Voltage (VCBO) :
- 75V
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1W
- Factory Lead Time :
- 23 Weeks
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~200°C TJ
- Qualification Status :
- Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Datasheets
- JAN2N3735
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3735 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 1A 1.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 900mV @ 100mA, 1A.During maximum operation, collector current can be as low as 1.5A volts.
JAN2N3735 Features
the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
JAN2N3735 Applications
There are a lot of Microsemi Corporation
JAN2N3735 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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