JAN2N3715
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- Mfr.Part #
- JAN2N3715
- Manufacturer
- Microchip Technology
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 10A TO3
- Stock
- 45,113
- In Stock ：
- 45,113
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 7V
- Reference Standard :
- MIL
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Configuration :
- Single
- Package / Case :
- TO-3
- Max Collector Current :
- 10A
- Pbfree Code :
- No
- Series :
- Military, MIL-PRF-19500/408
- Operating Temperature :
- -65°C~200°C TJ
- Max Power Dissipation :
- 5W
- Number of Pins :
- 3
- JESD-609 Code :
- e0
- Transistor Application :
- SWITCHING
- Qualification Status :
- Qualified
- JEDEC-95 Code :
- TO-204AA
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 2A, 10A
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Factory Lead Time :
- 22 Weeks
- Number of Terminations :
- 2
- Terminal Form :
- PIN/PEG
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 3A 2V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2002
- Packaging :
- Bulk
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- JESD-30 Code :
- O-MBFM-P2
- Pin Count :
- 2
- Transition Frequency :
- 2.5MHz
- Current - Collector Cutoff (Max) :
- 1mA
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 80V
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 5W
- Collector Emitter Voltage (VCEO) :
- 60V
- Datasheets
- JAN2N3715
NPN -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON NPN TO-3 Bulk Through Hole
JAN2N3715 Overview
In this device, the DC current gain is 30 @ 3A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 2A, 10A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 2.5MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
JAN2N3715 Features
the DC current gain for this device is 30 @ 3A 2V
the vce saturation(Max) is 2.5V @ 2A, 10A
the emitter base voltage is kept at 7V
a transition frequency of 2.5MHz
JAN2N3715 Applications
There are a lot of Microsemi Corporation
JAN2N3715 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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