JAN2N3700UB
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- Mfr.Part #
- JAN2N3700UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A 3UB
- Stock
- 20,790
- In Stock ：
- 20,790
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 500mW
- Configuration :
- Single
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 500mV
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Collector Base Voltage (VCBO) :
- 140V
- Power - Max :
- 500mW
- Qualification Status :
- Qualified
- Mount :
- Surface Mount
- Additional Feature :
- High Reliability
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Type :
- NPN
- RoHS Status :
- Non-RoHS Compliant
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Breakdown Voltage :
- 80V
- Max Collector Current :
- 1A
- ECCN Code :
- EAR99
- Reference Standard :
- MIL-19500
- Terminal Position :
- Dual
- Series :
- Military, MIL-PRF-19500/391
- Number of Pins :
- 3
- Package / Case :
- 3-SMD, No Lead
- Radiation Hardening :
- No
- HTS Code :
- 8541.21.00.95
- Pin Count :
- 3
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Packaging :
- Bulk
- Datasheets
- JAN2N3700UB
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
JAN2N3700UB Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 500mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.Collector current can be as low as 1A volts at its maximum.
JAN2N3700UB Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
JAN2N3700UB Applications
There are a lot of Microsemi Corporation
JAN2N3700UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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