JAN2N3700
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- Mfr.Part #
- JAN2N3700
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO18
- Stock
- 206
- In Stock ：
- 206
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Max Collector Current :
- 1A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2007
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 80V
- Current - Collector Cutoff (Max) :
- 10nA
- Series :
- Military, MIL-PRF-19500/391
- Polarity/Channel Type :
- NPN
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- Terminal Form :
- Wire
- Operating Temperature :
- -65°C~200°C TJ
- Qualification Status :
- Qualified
- Collector Base Voltage (VCBO) :
- 140V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Factory Lead Time :
- 8 Weeks
- Configuration :
- Single
- Pbfree Code :
- No
- Number of Pins :
- 3
- Max Power Dissipation :
- 500mW
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Power Dissipation :
- 500mW
- Packaging :
- Bulk
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Lead Free :
- Contains Lead
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Datasheets
- JAN2N3700
NPN -65°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JAN2N3700 Overview
In this device, the DC current gain is 50 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JAN2N3700 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
JAN2N3700 Applications
There are a lot of Microsemi Corporation
JAN2N3700 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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