JAN2N3637
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- Mfr.Part #
- JAN2N3637
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 175V 1A TO39
- Stock
- 27,620
- In Stock ：
- 27,620
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Operating Temperature :
- -65°C~200°C TJ
- Number of Elements :
- 1
- Series :
- Military, MIL-PRF-19500/357
- Collector Emitter Voltage (VCEO) :
- 175V
- RoHS Status :
- Non-RoHS Compliant
- Turn On Time-Max (ton) :
- 200ns
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Number of Terminations :
- 3
- Pbfree Code :
- No
- Qualification Status :
- Qualified
- Current - Collector Cutoff (Max) :
- 10μA
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Terminal Form :
- Wire
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 23 Weeks
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2007
- Collector Base Voltage (VCBO) :
- 175V
- Number of Pins :
- 3
- JESD-609 Code :
- e0
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Transistor Type :
- PNP
- Turn Off Time-Max (toff) :
- 650ns
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 1W
- Power Dissipation :
- 1W
- Pin Count :
- 2
- Configuration :
- Single
- Datasheets
- JAN2N3637
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3637 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JAN2N3637 Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
JAN2N3637 Applications
There are a lot of Microsemi Corporation
JAN2N3637 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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