JAN2N3636L
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- Mfr.Part #
- JAN2N3636L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 175V 1A TO5
- Stock
- 37,361
- In Stock ：
- 37,361
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~200°C TJ
- Qualification Status :
- Qualified
- Number of Pins :
- 3
- Turn Off Time-Max (toff) :
- 650ns
- Published :
- 2007
- Max Collector Current :
- 1A
- Pbfree Code :
- No
- HTS Code :
- 8541.29.00.95
- Series :
- Military, MIL-PRF-19500/357
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- JESD-609 Code :
- e0
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 23 Weeks
- Configuration :
- Single
- Packaging :
- Bulk
- Max Power Dissipation :
- 1W
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Current - Collector Cutoff (Max) :
- 10μA
- Collector Base Voltage (VCBO) :
- 175V
- Collector Emitter Voltage (VCEO) :
- 175V
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Power - Max :
- 1W
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- RoHS Status :
- Non-RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA 10V
- Pin Count :
- 3
- Terminal Form :
- Wire
- Turn On Time-Max (ton) :
- 200ns
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- Datasheets
- JAN2N3636L
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N3636L Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 50mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.When collector current reaches its maximum, it can reach 1A volts.
JAN2N3636L Features
the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
JAN2N3636L Applications
There are a lot of Microsemi Corporation
JAN2N3636L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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