JAN2N3636
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- Mfr.Part #
- JAN2N3636
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 175V 1A TO39
- Stock
- 14,631
- In Stock ：
- 14,631
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA 10V
- Pin Count :
- 2
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Turn On Time-Max (ton) :
- 200ns
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 175V
- Series :
- Military, MIL-PRF-19500/357
- Collector Emitter Voltage (VCEO) :
- 175V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Operating Temperature :
- -65°C~200°C TJ
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Qualification Status :
- Qualified
- Radiation Hardening :
- No
- JESD-609 Code :
- e0
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Factory Lead Time :
- 23 Weeks
- RoHS Status :
- Non-RoHS Compliant
- Max Power Dissipation :
- 1W
- Terminal Form :
- Wire
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Packaging :
- Bulk
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Published :
- 2007
- HTS Code :
- 8541.29.00.95
- Configuration :
- Single
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 10μA
- Transistor Type :
- PNP
- Max Collector Current :
- 1A
- Turn Off Time-Max (toff) :
- 650ns
- Transistor Application :
- SWITCHING
- Datasheets
- JAN2N3636
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3636 Overview
In this device, the DC current gain is 50 @ 50mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 50mA.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JAN2N3636 Features
the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
JAN2N3636 Applications
There are a lot of Microsemi Corporation
JAN2N3636 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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