JAN2N3634L
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- Mfr.Part #
- JAN2N3634L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 140V 1A TO5
- Stock
- 1,037
- In Stock ：
- 1,037
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- Number of Pins :
- 3
- Max Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA 10V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Series :
- Military, MIL-PRF-19500/357
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Collector Emitter Voltage (VCEO) :
- 140V
- Turn Off Time-Max (toff) :
- 650ns
- Power - Max :
- 1W
- Max Collector Current :
- 1A
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Operating Temperature :
- -65°C~200°C TJ
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Published :
- 2007
- HTS Code :
- 8541.29.00.95
- Turn On Time-Max (ton) :
- 200ns
- Current - Collector Cutoff (Max) :
- 10μA
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Packaging :
- Bulk
- Pbfree Code :
- No
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 140V
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Qualification Status :
- Qualified
- Factory Lead Time :
- 23 Weeks
- Pin Count :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- PNP
- Terminal Position :
- BOTTOM
- Terminal Form :
- Wire
- Datasheets
- JAN2N3634L
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N3634L Overview
In this device, the DC current gain is 50 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 50mA.Maximum collector currents can be below 1A volts.
JAN2N3634L Features
the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
JAN2N3634L Applications
There are a lot of Microsemi Corporation
JAN2N3634L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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