JAN2N3507AL
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- Mfr.Part #
- JAN2N3507AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A TO5
- Stock
- 29,607
- In Stock ：
- 29,607
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- Turn Off Time-Max (toff) :
- 90ns
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- ECCN Code :
- EAR99
- Turn On Time-Max (ton) :
- 45ns
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Pin Count :
- 3
- Number of Elements :
- 1
- Max Collector Current :
- 3A
- Qualification Status :
- Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Published :
- 2007
- Number of Terminations :
- 3
- Factory Lead Time :
- 22 Weeks
- Power Dissipation :
- 1W
- Operating Temperature :
- -65°C~200°C TJ
- Case Connection :
- COLLECTOR
- Terminal Form :
- Wire
- Max Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Transistor Type :
- NPN
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 1.5A 2V
- Collector Base Voltage (VCBO) :
- 80V
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- TIN LEAD
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Series :
- Military, MIL-PRF-19500/349
- JESD-609 Code :
- e0
- Number of Pins :
- 3
- Datasheets
- JAN2N3507AL
NPN -65°C~200°C TJ 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N3507AL Overview
In this device, the DC current gain is 30 @ 1.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 250mA, 2.5A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.
JAN2N3507AL Features
the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 5V
JAN2N3507AL Applications
There are a lot of Microsemi Corporation
JAN2N3507AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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