JAN2N3507A
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- Mfr.Part #
- JAN2N3507A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A TO39
- Stock
- 47,012
- In Stock ：
- 47,012
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 50V
- Published :
- 2007
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~200°C TJ
- Mount :
- Through Hole
- Max Collector Current :
- 3A
- Turn Off Time-Max (toff) :
- 90ns
- Power Dissipation :
- 1W
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Pin Count :
- 3
- Transistor Type :
- NPN
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 1.5A 2V
- Number of Elements :
- 1
- Factory Lead Time :
- 22 Weeks
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Terminal Form :
- Wire
- Terminal Finish :
- TIN LEAD
- Terminal Position :
- BOTTOM
- Qualification Status :
- Qualified
- Turn On Time-Max (ton) :
- 45ns
- Collector Base Voltage (VCBO) :
- 80V
- Configuration :
- Single
- Series :
- Military, MIL-PRF-19500/349
- JESD-609 Code :
- e0
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- Max Power Dissipation :
- 1W
- Datasheets
- JAN2N3507A
NPN -65°C~200°C TJ 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3507A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 1.5A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 250mA, 2.5A.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
JAN2N3507A Features
the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 5V
JAN2N3507A Applications
There are a lot of Microsemi Corporation
JAN2N3507A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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