JAN2N3501UB
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- Mfr.Part #
- JAN2N3501UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.3A UB
- Stock
- 1,922
- In Stock ：
- 1,922
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Breakdown Voltage :
- 150V
- RoHS Status :
- Non-RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Configuration :
- Single
- Turn Off Time-Max (toff) :
- 1150ns
- Qualification Status :
- Qualified
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Power Dissipation :
- 500mW
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Max Collector Current :
- 300mA
- Package / Case :
- 3-SMD, No Lead
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e0
- Published :
- 2007
- Max Power Dissipation :
- 500mW
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Turn On Time-Max (ton) :
- 115ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Military, MIL-PRF-19500/366
- Operating Temperature :
- -65°C~200°C TJ
- Factory Lead Time :
- 23 Weeks
- Packaging :
- Bulk
- HTS Code :
- 8541.21.00.95
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 150V
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 150V
- Datasheets
- JAN2N3501UB
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
JAN2N3501UB Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 300mA volts.
JAN2N3501UB Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
JAN2N3501UB Applications
There are a lot of Microsemi Corporation
JAN2N3501UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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