JAN2N3501L
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- Mfr.Part #
- JAN2N3501L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.3A TO5
- Stock
- 38,551
- In Stock ：
- 38,551
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Qualified
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~200°C TJ
- Turn Off Time-Max (toff) :
- 1150ns
- Terminal Form :
- Wire
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 150V
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- Collector Base Voltage (VCBO) :
- 150V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Series :
- Military, MIL-PRF-19500/366
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 23 Weeks
- Collector Emitter Voltage (VCEO) :
- 400mV
- Max Collector Current :
- 300mA
- Configuration :
- Single
- Published :
- 2007
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Turn On Time-Max (ton) :
- 115ns
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Pin Count :
- 3
- HTS Code :
- 8541.29.00.95
- Power - Max :
- 1W
- JESD-609 Code :
- e0
- Pbfree Code :
- No
- Max Power Dissipation :
- 1W
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Datasheets
- JAN2N3501L
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N3501L Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 15mA, 150mA.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.
JAN2N3501L Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
JAN2N3501L Applications
There are a lot of Microsemi Corporation
JAN2N3501L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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