JAN2N3500U4
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- Mfr.Part #
- JAN2N3500U4
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.3A U4
- Stock
- 18,919
- In Stock ：
- 18,919
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 50nA (ICBO)
- Series :
- T600
- Mounting Type :
- Surface Mount
- Product Status :
- Obsolete
- Transistor Type :
- NPN
- For Measuring :
- Temperature (Non-Contact)
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Frequency - Transition :
- -
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Type :
- Infrared Camera, Thermal Imager
- Package :
- Bulk
- Power - Max :
- 1 W
- Supplier Device Package :
- U4
- Current - Collector (Ic) (Max) :
- 300 mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Voltage - Collector Emitter Breakdown (Max) :
- 150 V
- Includes :
- Battery, Cable, Calibration Certificate, Case, Charger, Headset, Lens Cap, Memory Card, Power Supply, Strap, Tripod Adapter
- Package / Case :
- 3-SMD, No Lead
- Datasheets
- JAN2N3500U4
NPN -65°C ~ 200°C (TJ) 50nA (ICBO) 3-SMD, No Lead Surface Mount
JAN2N3500U4 Overview
In this device, the DC current gain is 40 @ 150mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 15mA, 150mA.Product comes in the supplier's device package U4.There is a 150 V maximal voltage in the device due to collector-emitter breakdown.
JAN2N3500U4 Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the supplier device package of U4
JAN2N3500U4 Applications
There are a lot of Microchip
JAN2N3500U4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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