JAN2N3499
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- Mfr.Part #
- JAN2N3499
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.5A TO39
- Stock
- 49,198
- In Stock ：
- 49,198
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~200°C TJ
- Mounting Type :
- Through Hole
- Turn Off Time-Max (toff) :
- 1150ns
- Polarity/Channel Type :
- NPN
- Mount :
- Through Hole
- Published :
- 2007
- Max Power Dissipation :
- 1W
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Series :
- Military, MIL-PRF-19500/366
- Max Collector Current :
- 500mA
- Terminal Form :
- Wire
- Number of Terminations :
- 3
- Pbfree Code :
- No
- Qualification Status :
- Qualified
- Power - Max :
- 1W
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 23 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 100V
- Pin Count :
- 2
- Configuration :
- Single
- Transition Frequency :
- 150MHz
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Radiation Hardening :
- No
- JESD-609 Code :
- e0
- Packaging :
- Bulk
- Transistor Type :
- NPN
- Turn On Time-Max (ton) :
- 115ns
- HTS Code :
- 8541.29.00.95
- Collector Base Voltage (VCBO) :
- 100V
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Datasheets
- JAN2N3499
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3499 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 30mA, 300mA.150MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
JAN2N3499 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
a transition frequency of 150MHz
JAN2N3499 Applications
There are a lot of Microsemi Corporation
JAN2N3499 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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