JAN2N3467
- Mfr.Part #
- JAN2N3467
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- NPN TRANSISTOR
- Stock
- 37,310
- In Stock :
- 37,310
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Published :
- 2007
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Through Hole
- Terminal Form :
- Wire
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 1V
- Turn Off Time-Max (toff) :
- 90ns
- Number of Terminations :
- 3
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Max Power Dissipation :
- 1W
- Transistor Type :
- PNP
- Transition Frequency :
- 175MHz
- Terminal Position :
- BOTTOM
- Configuration :
- Single
- HTS Code :
- 8541.29.00.75
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Power - Max :
- 1W
- Pin Count :
- 2
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Series :
- Military, MIL-PRF-19500/348
- Pbfree Code :
- No
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 100mA, 1A
- Radiation Hardening :
- No
- Turn On Time-Max (ton) :
- 40ns
- Collector Base Voltage (VCBO) :
- 40V
- Factory Lead Time :
- 22 Weeks
- Qualification Status :
- Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Datasheets
- JAN2N3467

PNP -55°C~175°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N3467L Overview
In this device, the DC current gain is 40 @ 500mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 100mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 175MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JAN2N3467L Features
the DC current gain for this device is 40 @ 500mA 1V
the vce saturation(Max) is 1.2V @ 100mA, 1A
a transition frequency of 175MHz
JAN2N3467L Applications
There are a lot of Microsemi Corporation
JAN2N3467L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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