JAN2N3440L
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- Mfr.Part #
- JAN2N3440L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 250V 1A TO5
- Stock
- 20,914
- In Stock ：
- 20,914
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- JESD-609 Code :
- e0
- Max Collector Current :
- 1A
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 250V
- Collector Base Voltage (VCBO) :
- 300V
- Series :
- Military, MIL-PRF-19500/368
- Current - Collector Cutoff (Max) :
- 2µA
- Pbfree Code :
- No
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- Max Power Dissipation :
- 800mW
- Factory Lead Time :
- 22 Weeks
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 250V
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Operating Temperature :
- -65°C~200°C TJ
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Power Dissipation :
- 800mW
- Terminal Form :
- Wire
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Datasheets
- JAN2N3440L
NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N3440L Overview
In this device, the DC current gain is 40 @ 20mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 4mA, 50mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JAN2N3440L Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
JAN2N3440L Applications
There are a lot of Microsemi Corporation
JAN2N3440L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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