JAN2N3440
- Mfr.Part #
- JAN2N3440
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 250V 1A TO39
- Stock
- 28,031
- In Stock :
- 28,031
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1A
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 2µA
- Collector Base Voltage (VCBO) :
- 300V
- Configuration :
- Single
- Operating Temperature :
- -65°C~200°C TJ
- Terminal Form :
- Wire
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Pbfree Code :
- No
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Collector Emitter Voltage (VCEO) :
- 250V
- JESD-609 Code :
- e0
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Factory Lead Time :
- 22 Weeks
- Radiation Hardening :
- No
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 250V
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- NPN
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Power Dissipation :
- 800mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Series :
- Military, MIL-PRF-19500/368
- Packaging :
- Bulk
- Max Power Dissipation :
- 800mW
- Mount :
- Through Hole
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 7V
- Datasheets
- JAN2N3440
NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N3440L Overview
In this device, the DC current gain is 40 @ 20mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 4mA, 50mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JAN2N3440L Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
JAN2N3440L Applications
There are a lot of Microsemi Corporation
JAN2N3440L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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