JAN2N3439UA

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Product Type :

BJTs - Bipolar Transistors

Number of Terminals :

4

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Terminal Position :

Dual

DC Current Gain-Min (hFE) :

40

Vce Saturation (Max) @ Ib, Ic :

500mV @ 4mA, 50mA

Case Connection :

COLLECTOR

Brand :

Microchip / Microsemi

Terminal Form :

NO LEAD

Power - Max :

800 mW

Current - Collector (Ic) (Max) :

2 µA

Qualification Status :

Qualified

Technology :

Si

Package :

Bulk

HTS Code :

8541.21.00.95

Package Shape :

RECTANGULAR

Voltage - Collector Emitter Breakdown (Max) :

350 V

Surface Mount :

yes

Reach Compliance Code :

Compliant

Mounting Type :

Surface Mount

Number of Elements :

1

Terminal Finish :

Gold (Au) - with Nickel (Ni) barrier

Peak Reflow Temperature (Cel) :

260

Frequency - Transition :

-

Collector-Emitter Voltage-Max :

350 V

Product Status :

Active

Series :

Military, MIL-PRF-19500/368

Operating Temperature :

-65°C ~ 200°C (TJ)

RoHS :

N

JESD-609 Code :

e4

Pin Count :

4

Transistor Type :

NPN

Power Dissipation-Max (Abs) :

5 W

Collector Current-Max (IC) :

1 A

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 20mA, 10V

Configuration :

Single

JESD-30 Code :

R-CDSO-N4

Package / Case :

4-SMD, No Lead

Product Category :

Bipolar Transistors - BJT

Reference Standard :

MIL-19500

Current - Collector Cutoff (Max) :

2µA

Supplier Device Package :

UA