JAN2N3439
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- Mfr.Part #
- JAN2N3439
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 350V 1A TO39
- Stock
- 34,412
- In Stock ：
- 34,412
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 40MHz
- Configuration :
- Single
- Case Connection :
- COLLECTOR
- Qualification Status :
- Qualified
- Max Collector Current :
- 1A
- Terminal Form :
- Wire
- Series :
- Military, MIL-PRF-19500/368
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Factory Lead Time :
- 22 Weeks
- Collector Emitter Voltage (VCEO) :
- 350V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- No
- Power Dissipation :
- 800mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Base Voltage (VCBO) :
- 450V
- Packaging :
- Bulk
- Transition Frequency :
- 15MHz
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Breakdown Voltage :
- 350V
- Number of Elements :
- 1
- Max Power Dissipation :
- 800mW
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 2µA
- Published :
- 2007
- Polarity/Channel Type :
- NPN
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 7V
- Datasheets
- JAN2N3439
NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3439 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 20mA 10V.When VCE saturation is 500mV @ 4mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 15MHz.A maximum collector current of 1A volts can be achieved.
JAN2N3439 Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 15MHz
JAN2N3439 Applications
There are a lot of Microsemi Corporation
JAN2N3439 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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