JAN2N3421
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- Mfr.Part #
- JAN2N3421
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A TO5
- Stock
- 21,382
- In Stock ：
- 21,382
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 8V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Voltage (VCEO) :
- 80V
- Terminal Form :
- Wire
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 1W
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Qualification Status :
- Qualified
- Number of Elements :
- 1
- Configuration :
- Single
- Terminal Position :
- BOTTOM
- Transistor Application :
- SWITCHING
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Through Hole
- Max Collector Current :
- 3A
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- JESD-609 Code :
- e0
- Published :
- 2007
- Factory Lead Time :
- 22 Weeks
- Mounting Type :
- Through Hole
- Pin Count :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Number of Pins :
- 3
- Max Power Dissipation :
- 1W
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 125V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 2V
- Series :
- Military, MIL-PRF-19500/393
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 5μA
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -65°C~200°C TJ
- Datasheets
- JAN2N3421
NPN -65°C~200°C TJ 5μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3421S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 1A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 8V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 3A volts.
JAN2N3421S Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 8V
JAN2N3421S Applications
There are a lot of Microsemi Corporation
JAN2N3421S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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