JAN2N3419
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- Mfr.Part #
- JAN2N3419
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A TO39
- Stock
- 27,829
- In Stock ：
- 27,829
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 80V
- Mounting Type :
- Through Hole
- Published :
- 2007
- Factory Lead Time :
- 22 Weeks
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 5μA
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- NPN
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- JESD-609 Code :
- e0
- Current - Collector (Ic) (Max) :
- 3A
- HTS Code :
- 8541.29.00.95
- Series :
- Military, MIL-PRF-19500/393
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1A 2V
- Mount :
- Through Hole
- Max Collector Current :
- 3A
- Case Connection :
- COLLECTOR
- Pbfree Code :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Form :
- Wire
- ECCN Code :
- EAR99
- Configuration :
- Single
- Operating Temperature :
- -65°C~200°C TJ
- Collector Base Voltage (VCBO) :
- 125V
- Qualification Status :
- Qualified
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-5
- Datasheets
- JAN2N3419
NPN -65°C~200°C TJ 5μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3419 Overview
In this device, the DC current gain is 20 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
JAN2N3419 Features
the DC current gain for this device is 20 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
JAN2N3419 Applications
There are a lot of Microsemi Corporation
JAN2N3419 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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