JAN2N3251A

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Turn On Time-Max (ton) :

70ns

Terminal Form :

Wire

Collector Base Voltage (VCBO) :

60V

Max Power Dissipation :

360mW

Case Connection :

COLLECTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Max Collector Current :

200mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Military, MIL-PRF-19500/323

Collector Emitter Voltage (VCEO) :

60V

Radiation Hardening :

No

Operating Temperature :

-65°C~200°C TJ

Transistor Type :

PNP

Package / Case :

TO-205AD, TO-39-3 Metal Can

Pbfree Code :

No

Configuration :

Single

Published :

2007

Mount :

Through Hole

Number of Terminations :

3

ECCN Code :

EAR99

JESD-609 Code :

e0

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Number of Elements :

1

Number of Pins :

3

Emitter Base Voltage (VEBO) :

5V

Current - Collector Cutoff (Max) :

10μA ICBO

Terminal Position :

BOTTOM

Pin Count :

3

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Terminal Finish :

Tin/Lead (Sn/Pb)

Packaging :

Bulk

Polarity/Channel Type :

PNP

Transistor Application :

SWITCHING

Power Dissipation :

360mW