JAN2N3057A

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Mfr.Part #
JAN2N3057A
Manufacturer
Microchip Technology
Package / Case
TO-206AB, TO-46-3 Metal Can
Datasheet
Download
Description
TRANS NPN 80V 1A TO46-3
Stock
2,040
In Stock :
2,040

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
140V
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
80V
RoHS Status :
Non-RoHS Compliant
Mounting Type :
Through Hole
Series :
Military, MIL-PRF-19500/391
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 500mA 10V
Supplier Device Package :
TO-46-3
Number of Pins :
3
Transistor Type :
NPN
Min Operating Temperature :
-65°C
Operating Temperature :
-65°C~200°C TJ
Factory Lead Time :
23 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Operating Temperature :
200°C
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Max Collector Current :
1A
Current - Collector Cutoff (Max) :
10nA
Power - Max :
500mW
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) :
80V
Max Power Dissipation :
500mW
Collector Emitter Voltage (VCEO) :
500mV
Packaging :
Bulk
Package / Case :
TO-206AB, TO-46-3 Metal Can
Current - Collector (Ic) (Max) :
1A
Published :
2007
Radiation Hardening :
No
Datasheets
JAN2N3057A
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N3057A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-65°C~200°C TJ, Package / Case:TO-206AB, TO-46-3 Metal Can, JAN2N3057A pinout, JAN2N3057A datasheet PDF, JAN2N3057A amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N3057A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology JAN2N3057A


NPN -65°C~200°C TJ 10nA TO-206AB, TO-46-3 Metal Can Bulk Through Hole

JAN2N3057A Overview


In this device, the DC current gain is 50 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Product comes in the supplier's device package TO-46-3.There is a 80V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

JAN2N3057A Features


the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-46-3


JAN2N3057A Applications


There are a lot of Microsemi Corporation
JAN2N3057A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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