JAN2N3055
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- Mfr.Part #
- JAN2N3055
- Manufacturer
- Microchip Technology
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS NPN 70V 15A TO3
- Stock
- 27,214
- In Stock ：
- 27,214
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- O-MBFM-P2
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- RoHS Status :
- Non-RoHS Compliant
- Qualification Status :
- Qualified
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Series :
- Military, MIL-PRF-19500/407
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Terminations :
- 2
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Mounting Type :
- Through Hole
- Pin Count :
- 2
- Polarity/Channel Type :
- NPN
- Terminal Form :
- PIN/PEG
- Pbfree Code :
- No
- Power Dissipation :
- 6W
- Configuration :
- Single
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Type :
- NPN
- Factory Lead Time :
- 22 Weeks
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 3.3A, 10A
- Collector Emitter Voltage (VCEO) :
- 70V
- Current - Collector Cutoff (Max) :
- 1mA
- Published :
- 2002
- Max Collector Current :
- 15A
- Collector Base Voltage (VCBO) :
- 100V
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 6W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Datasheets
- JAN2N3055
NPN -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON NPN TO-3 Bulk Through Hole
JAN2N3055 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 15A volts.
JAN2N3055 Features
the DC current gain for this device is 20 @ 4A 4V
the vce saturation(Max) is 2V @ 3.3A, 10A
the emitter base voltage is kept at 7V
JAN2N3055 Applications
There are a lot of Microsemi Corporation
JAN2N3055 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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