JAN2N3019S
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- Mfr.Part #
- JAN2N3019S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO39
- Stock
- 47,145
- In Stock ：
- 47,145
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 7V
- Configuration :
- Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Current - Collector Cutoff (Max) :
- 10nA
- Packaging :
- Bulk
- Max Power Dissipation :
- 800mW
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 140V
- Terminal Form :
- Wire
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 80V
- Mount :
- Through Hole
- Power Dissipation :
- 800mW
- Radiation Hardening :
- No
- Pbfree Code :
- No
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -65°C~200°C TJ
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Type :
- NPN
- Qualification Status :
- Qualified
- Pin Count :
- 2
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Collector Emitter Breakdown Voltage :
- 80V
- Terminal Position :
- BOTTOM
- Series :
- Military, MIL-PRF-19500/391
- Published :
- 2007
- Factory Lead Time :
- 23 Weeks
- Datasheets
- JAN2N3019S
NPN -65°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3019S Overview
In this device, the DC current gain is 50 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Maximum collector currents can be below 1A volts.
JAN2N3019S Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
JAN2N3019S Applications
There are a lot of Microsemi Corporation
JAN2N3019S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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