JAN2N3019
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- Mfr.Part #
- JAN2N3019
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO39
- Stock
- 4,345
- In Stock ：
- 4,345
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Wire
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Max Collector Current :
- 1A
- Mounting Type :
- Through Hole
- Qualification Status :
- Qualified
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~200°C TJ
- Pin Count :
- 2
- Power Dissipation :
- 800mW
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-5
- Pbfree Code :
- No
- Published :
- 2007
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 80V
- Max Power Dissipation :
- 800mW
- Emitter Base Voltage (VEBO) :
- 7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Lead Free :
- Contains Lead
- Packaging :
- Bulk
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Radiation Hardening :
- No
- Configuration :
- Single
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 140V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Terminal Position :
- BOTTOM
- Series :
- Military, MIL-PRF-19500/391
- RoHS Status :
- Non-RoHS Compliant
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Factory Lead Time :
- 23 Weeks
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Pins :
- 3
- Datasheets
- JAN2N3019
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3019 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 500mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.During maximum operation, collector current can be as low as 1A volts.
JAN2N3019 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
JAN2N3019 Applications
There are a lot of Microsemi Corporation
JAN2N3019 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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