JAN2N2919L

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

300mV @ 100µA, 1mA

Package / Case :

TO-78-6 Metal Can

Published :

2007

Reference Standard :

MIL-19500

Polarity/Channel Type :

NPN

Qualification Status :

Qualified

Configuration :

SEPARATE, 2 ELEMENTS

Series :

Military, MIL-PRF-19500/355

RoHS Status :

Non-RoHS Compliant

Max Power Dissipation :

350mW

Current - Collector (Ic) (Max) :

30mA

Max Collector Current :

30mA

Mount :

Through Hole

Collector Base Voltage (VCBO) :

70V

Number of Terminations :

6

Current - Collector Cutoff (Max) :

10μA ICBO

Collector Emitter Voltage (VCEO) :

60V

Radiation Hardening :

No

HTS Code :

8541.21.00.95

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON

Operating Temperature :

200°C TJ

Pin Count :

6

Terminal Form :

Wire

Number of Pins :

6

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e0

Packaging :

Bulk

Transistor Type :

2 NPN (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Number of Elements :

2

Mounting Type :

Through Hole

Factory Lead Time :

23 Weeks

Pbfree Code :

No

Terminal Finish :

Tin/Lead (Sn/Pb)