JAN2N2907AUB
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- Mfr.Part #
- JAN2N2907AUB
- Manufacturer
- Microchip Technology
- Package / Case
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A UB
- Stock
- 13,599
- In Stock ：
- 13,599
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 500mW
- Min Operating Temperature :
- -65°C
- Number of Elements :
- 1
- Lead Free :
- Contains Lead
- Max Operating Temperature :
- 200°C
- Published :
- 2002
- Power - Max :
- 500mW
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Number of Pins :
- 3
- Current - Collector (Ic) (Max) :
- 600mA
- Current - Collector Cutoff (Max) :
- 50nA
- Polarity :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- RoHS Status :
- Non-RoHS Compliant
- Base Part Number :
- 2N2907A
- Series :
- Military, MIL-PRF-19500/291
- Max Collector Current :
- 600mA
- Operating Temperature :
- -65°C~200°C TJ
- Mount :
- Surface Mount
- Datasheets
- JAN2N2907AUB
PNP -65°C~200°C TJ 50nA 1 Elements Surface Mount
JAN2N2907AUB Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
JAN2N2907AUB Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
JAN2N2907AUB Applications
There are a lot of Microsemi Corporation
JAN2N2907AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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