JAN2N2905A
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- Mfr.Part #
- JAN2N2905A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO39
- Stock
- 15,078
- In Stock ：
- 15,078
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 600mA
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 1μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- JESD-609 Code :
- e0
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Operating Temperature :
- -65°C~200°C TJ
- Mount :
- Through Hole
- Qualification Status :
- Qualified
- Lead Free :
- Contains Lead
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Turn On Time-Max (ton) :
- 45ns
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 600mW
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 60V
- Power - Max :
- 800mW
- Factory Lead Time :
- 23 Weeks
- Published :
- 2007
- Collector Base Voltage (VCBO) :
- 60V
- Configuration :
- Single
- Pbfree Code :
- No
- Number of Elements :
- 1
- Max Power Dissipation :
- 800mW
- Transistor Type :
- PNP
- Transition Frequency :
- 200MHz
- Series :
- Military, MIL-PRF-19500/290
- Terminal Form :
- Wire
- Polarity/Channel Type :
- PNP
- Pin Count :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- JAN2N2905A
PNP -65°C~200°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N2905A Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 200MHz is present in the part.Collector current can be as low as 600mA volts at its maximum.
JAN2N2905A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JAN2N2905A Applications
There are a lot of Microsemi Corporation
JAN2N2905A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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