JAN2N2605UB
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- Mfr.Part #
- JAN2N2605UB
- Manufacturer
- Microchip Technology
- Package / Case
- 4-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.03A UB
- Stock
- 19,657
- In Stock ：
- 19,657
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Series :
- Military, MIL-PRF-19500/354
- Frequency - Transition :
- -
- Product Status :
- Active
- Supplier Device Package :
- UB
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500µA, 5V
- Current - Collector (Ic) (Max) :
- 30 mA
- Power - Max :
- 400 mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Base Product Number :
- 2N2605
- Transistor Type :
- PNP
- Package :
- Bulk
- Current - Collector Cutoff (Max) :
- 10nA
- Package / Case :
- 4-SMD, No Lead
- Datasheets
- JAN2N2605UB
PNP -65°C ~ 200°C (TJ) 10nA 4-SMD, No Lead Surface Mount
JAN2N2605UB Overview
In this device, the DC current gain is 150 @ 500µA, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 500µA, 10mA.Supplier device package UB comes with the product.The device exhibits a collector-emitter breakdown at 60 V.
JAN2N2605UB Features
the DC current gain for this device is 150 @ 500µA, 5V
the vce saturation(Max) is 300mV @ 500µA, 10mA
the supplier device package of UB
JAN2N2605UB Applications
There are a lot of Microchip
JAN2N2605UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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