JAN2N2369AU
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- Mfr.Part #
- JAN2N2369AU
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- NPN TRANSISTOR
- Stock
- 11,914
- In Stock ：
- 11,914
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- JESD-609 Code :
- e0
- Published :
- 2007
- Packaging :
- Bulk
- Package / Case :
- 3-SMD, No Lead
- Mount :
- Surface Mount
- Configuration :
- Single
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~200°C TJ
- Collector Base Voltage (VCBO) :
- 40V
- Number of Elements :
- 1
- Terminal Position :
- Dual
- RoHS Status :
- Non-RoHS Compliant
- Turn Off Time-Max (toff) :
- 18ns
- Factory Lead Time :
- 23 Weeks
- Qualification Status :
- Qualified
- Max Collector Current :
- 400nA
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 10mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 360mW
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Turn On Time-Max (ton) :
- 12ns
- Series :
- Military, MIL-PRF-19500/317
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pbfree Code :
- No
- HTS Code :
- 8541.21.00.95
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Power - Max :
- 360mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 1V
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 450mV
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 15V
- Datasheets
- JAN2N2369AU
NPN -65°C~200°C TJ 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
JAN2N2369AUB Overview
DC current gain in this device equals 20 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 450mV @ 10mA, 100mA.In extreme cases, the collector current can be as low as 400nA volts.
JAN2N2369AUB Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
JAN2N2369AUB Applications
There are a lot of Microsemi Corporation
JAN2N2369AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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