JAN2N2369A
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- Mfr.Part #
- JAN2N2369A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 15V TO18
- Stock
- 1,843
- In Stock ：
- 1,843
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Packaging :
- Bulk
- Qualification Status :
- Qualified
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 40V
- RoHS Status :
- Non-RoHS Compliant
- Terminal Form :
- Wire
- Number of Pins :
- 3
- Factory Lead Time :
- 23 Weeks
- Max Power Dissipation :
- 360mW
- Transistor Type :
- NPN
- Transition Frequency :
- 500MHz
- Power Dissipation :
- 360mW
- JESD-609 Code :
- e0
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 1V
- Collector Emitter Voltage (VCEO) :
- 15V
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Series :
- Military, MIL-PRF-19500/317
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 400nA
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 10mA, 100mA
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 4.5V
- Operating Temperature :
- -65°C~200°C TJ
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Breakdown Voltage :
- 15V
- Published :
- 2001
- Pbfree Code :
- No
- Configuration :
- Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Datasheets
- JAN2N2369A
NPN -65°C~200°C TJ 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JAN2N2369A Overview
This device has a DC current gain of 20 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 450mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4.5V.As you can see, the part has a transition frequency of 500MHz.A maximum collector current of 400nA volts is possible.
JAN2N2369A Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
a transition frequency of 500MHz
JAN2N2369A Applications
There are a lot of Microsemi Corporation
JAN2N2369A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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