JAN2N2222AUB

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Mfr.Part #
JAN2N2222AUB
Manufacturer
Microchip Technology
Package / Case
3-SMD, Non-Standard
Datasheet
Download
Description
TRANS NPN 50V 0.8A UB
Stock
1,707
In Stock :
1,707

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
Non-RoHS Compliant
Published :
2007
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Max Operating Temperature :
200°C
Power - Max :
500mW
Transistor Type :
NPN
Collector Base Voltage (VCBO) :
75V
Current - Collector Cutoff (Max) :
50nA
Current - Collector (Ic) (Max) :
800mA
Package / Case :
3-SMD, Non-Standard
Emitter Base Voltage (VEBO) :
6V
Voltage - Collector Emitter Breakdown (Max) :
50V
Mounting Type :
Surface Mount
Number of Elements :
1
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Lifecycle Status :
IN PRODUCTION (Last Updated: 2 weeks ago)
Factory Lead Time :
8 Weeks
Power Dissipation :
500mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-65°C~200°C TJ
Max Collector Current :
800mA
Collector Emitter Voltage (VCEO) :
50V
Polarity :
NPN
Series :
Military, MIL-PRF-19500/255
Collector Emitter Breakdown Voltage :
50V
Number of Pins :
3
Max Power Dissipation :
500mW
Packaging :
Bulk
Mount :
Surface Mount
Min Operating Temperature :
-65°C
Datasheets
JAN2N2222AUB
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N2222AUB from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:3-SMD, Non-Standard, Mounting Type:Surface Mount, Operating Temperature:-65°C~200°C TJ, Number of Pins:3, JAN2N2222AUB pinout, JAN2N2222AUB datasheet PDF, JAN2N2222AUB amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N2222AUB ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 50nA 1 Elements 3-SMD, Non-Standard Bulk Surface Mount

JAN2N2222AUB Overview


DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 800mA volts.

JAN2N2222AUB Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V


JAN2N2222AUB Applications


There are a lot of Microsemi Corporation
JAN2N2222AUB applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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