JAN2N2222AUB
- Mfr.Part #
- JAN2N2222AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, Non-Standard
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A UB
- Stock
- 1,707
- In Stock :
- 1,707
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2007
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Max Operating Temperature :
- 200°C
- Power - Max :
- 500mW
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 75V
- Current - Collector Cutoff (Max) :
- 50nA
- Current - Collector (Ic) (Max) :
- 800mA
- Package / Case :
- 3-SMD, Non-Standard
- Emitter Base Voltage (VEBO) :
- 6V
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- Factory Lead Time :
- 8 Weeks
- Power Dissipation :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~200°C TJ
- Max Collector Current :
- 800mA
- Collector Emitter Voltage (VCEO) :
- 50V
- Polarity :
- NPN
- Series :
- Military, MIL-PRF-19500/255
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Pins :
- 3
- Max Power Dissipation :
- 500mW
- Packaging :
- Bulk
- Mount :
- Surface Mount
- Min Operating Temperature :
- -65°C
- Datasheets
- JAN2N2222AUB
NPN -65°C~200°C TJ 50nA 1 Elements 3-SMD, Non-Standard Bulk Surface Mount
JAN2N2222AUB Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 800mA volts.
JAN2N2222AUB Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
JAN2N2222AUB Applications
There are a lot of Microsemi Corporation
JAN2N2222AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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