JAN2N2222AP
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- Mfr.Part #
- JAN2N2222AP
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 21,884
- In Stock ：
- 21,884
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS :
- N
- Power - Max :
- 500 mW
- Product Status :
- Active
- Mounting Type :
- Through Hole
- Frequency - Transition :
- -
- Series :
- -
- Supplier Device Package :
- TO-18 (TO-206AA)
- Brand :
- Microchip / Microsemi
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Current - Collector Cutoff (Max) :
- 50nA
- Package :
- Bulk
- Product Category :
- Microchip Technology
- Current - Collector (Ic) (Max) :
- 800 mA
- Manufacturer :
- Microchip
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Datasheets
- JAN2N2222AP
NPN -65°C ~ 200°C (TJ) 50nA TO-206AA, TO-18-3 Metal Can Through Hole
JAN2N2222AP Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA, 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.This product comes in a TO-18 (TO-206AA) device package from the supplier.Device displays Collector Emitter Breakdown (50 V maximal voltage).
JAN2N2222AP Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-18 (TO-206AA)
JAN2N2222AP Applications
There are a lot of Microchip Technology
JAN2N2222AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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