JAN2N2222AL
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- Mfr.Part #
- JAN2N2222AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO18
- Stock
- 29,097
- In Stock ：
- 29,097
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Collector Emitter Breakdown Voltage :
- 50V
- Published :
- 2007
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Max Power Dissipation :
- 500mW
- Reference Standard :
- MIL-19500/255
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 75V
- Pbfree Code :
- No
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 1V
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Wire
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Pins :
- 3
- Factory Lead Time :
- 23 Weeks
- Terminal Position :
- BOTTOM
- Power - Max :
- 500mW
- Transistor Element Material :
- SILICON
- Series :
- Military, MIL-PRF-19500/255
- RoHS Status :
- Non-RoHS Compliant
- Qualification Status :
- Qualified
- JESD-609 Code :
- e0
- Operating Temperature :
- -65°C~200°C TJ
- Current - Collector Cutoff (Max) :
- 50nA
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Transistor Type :
- NPN
- HTS Code :
- 8541.21.00.95
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Max Collector Current :
- 800mA
- Datasheets
- JAN2N2222AL
NPN -65°C~200°C TJ 50nA 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JAN2N2222AL Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
JAN2N2222AL Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N2222AL Applications
There are a lot of Microsemi Corporation
JAN2N2222AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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