JAN2N2222A
- Mfr.Part #
- JAN2N2222A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO218
- Stock
- 41,866
- In Stock :
- 41,866
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~200°C TJ
- Power Dissipation :
- 500mW
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 800mA
- Mount :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- RoHS Status :
- Non-RoHS Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Max Collector Current :
- 800mA
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- Lead Free :
- Contains Lead
- Current - Collector Cutoff (Max) :
- 50nA
- Supplier Device Package :
- TO-218
- Radiation Hardening :
- No
- Polarity :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 500mW
- Min Operating Temperature :
- -65°C
- Published :
- 2002
- Max Operating Temperature :
- 200°C
- Collector Base Voltage (VCBO) :
- 75V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Series :
- Military, MIL-PRF-19500/255
- Max Power Dissipation :
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 50V
- Factory Lead Time :
- 8 Weeks
- Datasheets
- JAN2N2222A
NPN -65°C~200°C TJ 50nA 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JAN2N2222A Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Product package TO-218 comes from the supplier.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.A maximum collector current of 800mA volts is possible.
JAN2N2222A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-218
JAN2N2222A Applications
There are a lot of Microsemi Corporation
JAN2N2222A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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