JAN2N2222A

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Mfr.Part #
JAN2N2222A
Manufacturer
Microchip Technology
Package / Case
TO-206AA, TO-18-3 Metal Can
Datasheet
Download
Description
TRANS NPN 50V 0.8A TO218
Stock
41,866
In Stock :
41,866

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
-65°C~200°C TJ
Power Dissipation :
500mW
Mounting Type :
Through Hole
Transistor Type :
NPN
Current - Collector (Ic) (Max) :
800mA
Mount :
Through Hole
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Package / Case :
TO-206AA, TO-18-3 Metal Can
RoHS Status :
Non-RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) :
50V
Max Collector Current :
800mA
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
50V
Lead Free :
Contains Lead
Current - Collector Cutoff (Max) :
50nA
Supplier Device Package :
TO-218
Radiation Hardening :
No
Polarity :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
500mW
Min Operating Temperature :
-65°C
Published :
2002
Max Operating Temperature :
200°C
Collector Base Voltage (VCBO) :
75V
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Series :
Military, MIL-PRF-19500/255
Max Power Dissipation :
500mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Number of Elements :
1
Emitter Base Voltage (VEBO) :
6V
Packaging :
Bulk
Collector Emitter Breakdown Voltage :
50V
Factory Lead Time :
8 Weeks
Datasheets
JAN2N2222A
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N2222A from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~200°C TJ, Mounting Type:Through Hole, Package / Case:TO-206AA, TO-18-3 Metal Can, Number of Pins:3, JAN2N2222A pinout, JAN2N2222A datasheet PDF, JAN2N2222A amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N2222A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology JAN2N2222A


NPN -65°C~200°C TJ 50nA 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole

JAN2N2222A Overview


This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Product package TO-218 comes from the supplier.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.A maximum collector current of 800mA volts is possible.

JAN2N2222A Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-218


JAN2N2222A Applications


There are a lot of Microsemi Corporation
JAN2N2222A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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