JAN2N2221AL
- Mfr.Part #
- JAN2N2221AL
- Manufacturer
- Microsemi
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO18
- Stock
- 38,678
- In Stock :
- 38,678
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 75V
- Pin Count :
- 3
- Reference Standard :
- MIL-19500/255T
- Current - Collector (Ic) (Max) :
- 800mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.21.00.95
- Packaging :
- Bulk
- Configuration :
- Single
- Published :
- 2007
- Number of Pins :
- 3
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Max Collector Current :
- 800mA
- RoHS Status :
- Non-RoHS Compliant
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e0
- Terminal Form :
- Wire
- Series :
- Military, MIL-PRF-19500/255
- Transistor Type :
- NPN
- Pbfree Code :
- No
- Factory Lead Time :
- 23 Weeks
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Qualification Status :
- Qualified
- Current - Collector Cutoff (Max) :
- 50nA
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 500mW
- Operating Temperature :
- -65°C~200°C TJ
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Datasheets
- JAN2N2221AL

NPN -65°C~200°C TJ 50nA 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JAN2N2221AL Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.Collector current can be as low as 800mA volts at its maximum.
JAN2N2221AL Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N2221AL Applications
There are a lot of Microsemi Corporation
JAN2N2221AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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