JAN2N2219A
- Mfr.Part #
- JAN2N2219A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO39
- Stock
- 43,750
- In Stock :
- 43,750
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 75V
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- Pbfree Code :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Mounting Type :
- Through Hole
- Series :
- Military, MIL-PRF-19500/251
- Terminal Form :
- Wire
- Current - Collector Cutoff (Max) :
- 10nA
- Max Power Dissipation :
- 800mW
- Polarity/Channel Type :
- NPN
- HTS Code :
- 8541.21.00.95
- Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 1V
- Power - Max :
- 800mW
- Number of Pins :
- 3
- Max Collector Current :
- 800mA
- Qualification Status :
- Qualified
- Radiation Hardening :
- No
- Published :
- 2007
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Mount :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- JESD-609 Code :
- e0
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~200°C TJ
- Transistor Type :
- NPN
- Reference Standard :
- MIL-19500/251L
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 23 Weeks
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Terminal Position :
- BOTTOM
- Datasheets
- JAN2N2219A
NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N2219AL Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.When collector current reaches its maximum, it can reach 800mA volts.
JAN2N2219AL Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N2219AL Applications
There are a lot of Microsemi Corporation
JAN2N2219AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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