JAN2N2219
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- Mfr.Part #
- JAN2N2219
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.8A TO39
- Stock
- 36,080
- In Stock ：
- 36,080
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2007
- Number of Elements :
- 1
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- HTS Code :
- 8541.21.00.95
- Collector Emitter Voltage (VCEO) :
- 1V
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Pbfree Code :
- No
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Power - Max :
- 800mW
- Packaging :
- Bulk
- Qualification Status :
- Qualified
- Max Collector Current :
- 800mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~200°C TJ
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- Max Power Dissipation :
- 800mW
- Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/251
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 50V
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Reference Standard :
- MIL-19500/251L
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Base Voltage (VCBO) :
- 75V
- Factory Lead Time :
- 23 Weeks
- Current - Collector Cutoff (Max) :
- 10nA
- Terminal Form :
- Wire
- Datasheets
- JAN2N2219
NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N2219AL Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.When collector current reaches its maximum, it can reach 800mA volts.
JAN2N2219AL Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N2219AL Applications
There are a lot of Microsemi Corporation
JAN2N2219AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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