JAN2N2218AL
- Mfr.Part #
- JAN2N2218AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO5
- Stock
- 15,444
- In Stock :
- 15,444
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2007
- Number of Elements :
- 1
- Qualification Status :
- Qualified
- Collector Base Voltage (VCBO) :
- 75V
- JESD-609 Code :
- e0
- Factory Lead Time :
- 23 Weeks
- Max Power Dissipation :
- 800mW
- Series :
- Military, MIL-PRF-19500/251
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 10nA
- Terminal Form :
- Wire
- HTS Code :
- 8541.21.00.95
- Max Collector Current :
- 800mA
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 50V
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Configuration :
- Single
- Packaging :
- Bulk
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -55°C~200°C TJ
- Transistor Application :
- SWITCHING
- Current - Collector (Ic) (Max) :
- 800mA
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Radiation Hardening :
- No
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Reference Standard :
- MIL-19500/251L
- Datasheets
- JAN2N2218AL
NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N2218AL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.During maximum operation, collector current can be as low as 800mA volts.
JAN2N2218AL Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N2218AL Applications
There are a lot of Microsemi Corporation
JAN2N2218AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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