JAN2N2218A
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- Mfr.Part #
- JAN2N2218A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO39
- Stock
- 14,108
- In Stock ：
- 14,108
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- HTS Code :
- 8541.21.00.95
- Collector Base Voltage (VCBO) :
- 75V
- JESD-609 Code :
- e0
- Current - Collector Cutoff (Max) :
- 10nA
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Transistor Element Material :
- SILICON
- Series :
- Military, MIL-PRF-19500/251
- Published :
- 2007
- Configuration :
- Single
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 23 Weeks
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Wire
- Case Connection :
- COLLECTOR
- Qualification Status :
- Qualified
- Current - Collector (Ic) (Max) :
- 800mA
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Max Power Dissipation :
- 800mW
- Operating Temperature :
- -55°C~200°C TJ
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- Pin Count :
- 3
- Reference Standard :
- MIL-19500/251L
- Radiation Hardening :
- No
- Max Collector Current :
- 800mA
- Mount :
- Through Hole
- Pbfree Code :
- No
- Datasheets
- JAN2N2218A
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NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N2218AL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.During maximum operation, collector current can be as low as 800mA volts.
JAN2N2218AL Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N2218AL Applications
There are a lot of Microsemi Corporation
JAN2N2218AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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