IXKP35N60C5
- Mfr.Part #
- IXKP35N60C5
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 35A TO220AB
- Stock
- 35,869
- In Stock :
- 35,869
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 600V
- Avalanche Energy Rating (Eas) :
- 800 mJ
- FET Feature :
- --
- Number of Terminations :
- 3
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.1Ohm
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 18A, 10V
- Product Status :
- Active
- Power Dissipation (Max) :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Product Number :
- IXKP35
- Terminal Position :
- Single
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Surface Mount :
- No
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-220AB
- DS Breakdown Voltage-Min :
- 600 V
- Reach Compliance Code :
- Compliant
- Terminal Form :
- THROUGH-HOLE
- FET Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Drain to Source Breakdown Voltage :
- 600V
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 100V
- Manufacturer :
- IXYS Corporation
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Package :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 35 A
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 2008
- Supplier Device Package :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- CoolMOS™
- Continuous Drain Current (ID) :
- 35A
- Operating Temperature :
- -40°C~150°C TJ
- Number of Terminals :
- 3
- Package / Case :
- TO-220-3
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Vgs(th) (Max) @ Id :
- 3.9V @ 1.2mA
- Datasheets
- IXKP35N60C5

N-Channel Tube 100m Ω @ 18A, 10V ±20V 2800pF @ 100V 70nC @ 10V 600V TO-220-3
IXKP35N60C5 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2800pF @ 100V.This device has a continuous drain current (ID) of [35A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 35 A.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXKP35N60C5 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 600V voltage
a 600V drain to source voltage (Vdss)
IXKP35N60C5 Applications
There are a lot of IXYS
IXKP35N60C5 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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