IXKP20N60C5M

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Mfr.Part #
IXKP20N60C5M
Manufacturer
Littelfuse
Package / Case
TO-220-3 Full Pack, Isolated Tab
Datasheet
Download
Description
MOSFET N-CH 600V 7.6A TO220ABFP
Stock
36,529
In Stock :
36,529

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Transistor Application :
SWITCHING
Configuration :
Single
Drain-source On Resistance-Max :
0.2Ohm
Drain to Source Breakdown Voltage :
600V
Transistor Element Material :
SILICON
Manufacturer :
IXYS
Rise Time :
5ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Maximum Operating Temperature :
+ 150 C
Mount :
Through Hole
Mounting Type :
Through Hole
Power Dissipation (Max) :
--
Element Configuration :
Single
Package / Case :
TO-220-3 Full Pack, Isolated Tab
Package Shape :
RECTANGULAR
Transistor Polarity :
N-Channel
Mounting Style :
Through Hole
Packaging :
Tube
Channel Mode :
Enhancement
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS :
Details
Continuous Drain Current (ID) :
7.6A
JESD-30 Code :
R-PSFM-T3
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
Terminal Finish :
Matte Tin (Sn)
Terminal Position :
Single
Number of Pins :
3
Vgs (Max) :
±20V
FET Feature :
Super Junction
DS Breakdown Voltage-Min :
600 V
Current - Continuous Drain (Id) @ 25°C :
7.6A Tc
Avalanche Energy Rating (Eas) :
435 mJ
Rds On (Max) @ Id, Vgs :
200m Ω @ 10A, 10V
Drain to Source Voltage (Vdss) :
600V
Product Status :
Active
Package :
Tube
Number of Terminals :
3
Surface Mount :
No
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Brand :
IXYS
FET Type :
N-Channel
Factory Lead Time :
32 Weeks
Number of Elements :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2009
Tradename :
CoolMOS
Drain Current-Max (Abs) (ID) :
7.6 A
Turn-Off Delay Time :
50 ns
Power Dissipation :
33W
Pin Count :
3
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
1520pF @ 100V
Vgs(th) (Max) @ Id :
3.5V @ 1.1mA
Transistor Type :
1 N-Channel
Minimum Operating Temperature :
- 55 C
Base Product Number :
IXKP20
Polarity/Channel Type :
N-Channel
Qualification Status :
Not Qualified
Number of Terminations :
3
Number of Channels :
1 Channel
RoHS Status :
ROHS3 Compliant
Series :
CoolMOS™
JESD-609 Code :
e3
Reach Compliance Code :
Compliant
JEDEC-95 Code :
TO-220AB
Product Category :
MOSFET
Type :
CoolMOS Power MOSFET
Supplier Device Package :
TO-220ABFP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
5 ns
Gate to Source Voltage (Vgs) :
20V
Case Connection :
Isolated
Terminal Form :
THROUGH-HOLE
Pbfree Code :
yes
Datasheets
IXKP20N60C5M
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXKP20N60C5M from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Isolated Tab, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, Number of Channels:1 Channel, Type:CoolMOS Power MOSFET, IXKP20N60C5M pinout, IXKP20N60C5M datasheet PDF, IXKP20N60C5M amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXKP20N60C5M ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXKP20N60C5M


N-Channel Tube 200m Ω @ 10A, 10V ±20V 1520pF @ 100V 30nC @ 10V 600V TO-220-3 Full Pack, Isolated Tab

IXKP20N60C5M Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 435 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1520pF @ 100V.This device conducts a continuous drain current (ID) of 7.6A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 7.6 A.When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXKP20N60C5M Features


the avalanche energy rating (Eas) is 435 mJ
a continuous drain current (ID) of 7.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
a 600V drain to source voltage (Vdss)


IXKP20N60C5M Applications


There are a lot of IXYS
IXKP20N60C5M applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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