IXKP20N60C5M
- Mfr.Part #
- IXKP20N60C5M
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 7.6A TO220ABFP
- Stock
- 36,529
- In Stock :
- 36,529
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Transistor Application :
- SWITCHING
- Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.2Ohm
- Drain to Source Breakdown Voltage :
- 600V
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- Rise Time :
- 5ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 150 C
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Power Dissipation (Max) :
- --
- Element Configuration :
- Single
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Package Shape :
- RECTANGULAR
- Transistor Polarity :
- N-Channel
- Mounting Style :
- Through Hole
- Packaging :
- Tube
- Channel Mode :
- Enhancement
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS :
- Details
- Continuous Drain Current (ID) :
- 7.6A
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- MOSFET
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- Single
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- FET Feature :
- Super Junction
- DS Breakdown Voltage-Min :
- 600 V
- Current - Continuous Drain (Id) @ 25°C :
- 7.6A Tc
- Avalanche Energy Rating (Eas) :
- 435 mJ
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 10A, 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Product Status :
- Active
- Package :
- Tube
- Number of Terminals :
- 3
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Brand :
- IXYS
- FET Type :
- N-Channel
- Factory Lead Time :
- 32 Weeks
- Number of Elements :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2009
- Tradename :
- CoolMOS
- Drain Current-Max (Abs) (ID) :
- 7.6 A
- Turn-Off Delay Time :
- 50 ns
- Power Dissipation :
- 33W
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1520pF @ 100V
- Vgs(th) (Max) @ Id :
- 3.5V @ 1.1mA
- Transistor Type :
- 1 N-Channel
- Minimum Operating Temperature :
- - 55 C
- Base Product Number :
- IXKP20
- Polarity/Channel Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Number of Channels :
- 1 Channel
- RoHS Status :
- ROHS3 Compliant
- Series :
- CoolMOS™
- JESD-609 Code :
- e3
- Reach Compliance Code :
- Compliant
- JEDEC-95 Code :
- TO-220AB
- Product Category :
- MOSFET
- Type :
- CoolMOS Power MOSFET
- Supplier Device Package :
- TO-220ABFP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 5 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- Isolated
- Terminal Form :
- THROUGH-HOLE
- Pbfree Code :
- yes
- Datasheets
- IXKP20N60C5M

N-Channel Tube 200m Ω @ 10A, 10V ±20V 1520pF @ 100V 30nC @ 10V 600V TO-220-3 Full Pack, Isolated Tab
IXKP20N60C5M Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 435 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1520pF @ 100V.This device conducts a continuous drain current (ID) of 7.6A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 7.6 A.When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXKP20N60C5M Features
the avalanche energy rating (Eas) is 435 mJ
a continuous drain current (ID) of 7.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
a 600V drain to source voltage (Vdss)
IXKP20N60C5M Applications
There are a lot of IXYS
IXKP20N60C5M applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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