IXKP24N60C5

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Mfr.Part #
IXKP24N60C5
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 24A TO220AB
Stock
7,894
In Stock :
7,894

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Resistance :
165mOhm
Package / Case :
TO-220-3
FET Feature :
Super Junction
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance :
2 nF
Channel Mode :
Enhancement
Packaging :
Tube
Manufacturer :
IXYS
Reach Compliance Code :
Unknown
Rds On Max :
165 mΩ
Transistor Polarity :
N-Channel
Polarity/Channel Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Terminal Form :
THROUGH-HOLE
Continuous Drain Current (ID) :
24A
Surface Mount :
No
RoHS :
Compliant
Maximum Operating Temperature :
+ 150 C
Factory Lead Time :
28 Weeks
Pbfree Code :
yes
Mounting Style :
Through Hole
DS Breakdown Voltage-Min :
600 V
Terminal Position :
Single
Pin Count :
3
Vgs(th) (Max) @ Id :
3.5V @ 790μA
Operating Temperature :
-55°C~150°C TJ
Length :
10.66 mm
Configuration :
Single
Drain to Source Resistance :
165 mΩ
Product Type :
MOSFET
Width :
4.82 mm
Min Operating Temperature :
-55 °C
Drain to Source Breakdown Voltage :
600V
Height :
9.15 mm
Case Connection :
DRAIN
Minimum Operating Temperature :
- 55 C
Product Category :
MOSFET
Transistor Type :
1 N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2008
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Mount :
Through Hole
Element Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
Number of Terminations :
3
Gate to Source Voltage (Vgs) :
20V
Supplier Device Package :
TO-220AB
Power Dissipation (Max) :
--
Drain Current-Max (Abs) (ID) :
24 A
Max Operating Temperature :
150 °C
Transistor Element Material :
SILICON
Tradename :
CoolMOS
Package :
Tube
Base Product Number :
IXKP24
Rds On (Max) @ Id, Vgs :
165m Ω @ 12A, 10V
Series :
CoolMOS™
Number of Elements :
1
Drain to Source Voltage (Vdss) :
600 V
RoHS Status :
ROHS3 Compliant
Brand :
IXYS
JEDEC-95 Code :
TO-220AB
Product Status :
Active
JESD-30 Code :
R-PSFM-T3
Lead Free :
Lead Free
Number of Terminals :
3
Transistor Application :
SWITCHING
Drain-source On Resistance-Max :
0.165 Ω
Input Capacitance (Ciss) (Max) @ Vds :
2000pF @ 100V
Vgs (Max) :
±20V
Power Dissipation :
250W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate Charge (Qg) (Max) @ Vgs :
52nC @ 10V
Number of Channels :
1 Channel
Mounting Type :
Through Hole
Avalanche Energy Rating (Eas) :
522 mJ
Datasheets
IXKP24N60C5
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXKP24N60C5 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1 Channel, Mounting Type:Through Hole, IXKP24N60C5 pinout, IXKP24N60C5 datasheet PDF, IXKP24N60C5 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXKP24N60C5 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXKP24N60C5


N-Channel Tube 165m Ω @ 12A, 10V ±20V 2000pF @ 100V 52nC @ 10V 600 V TO-220-3

IXKP24N60C5 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 522 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2000pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 24A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [24 A] according to its drain current.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 165 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600 V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXKP24N60C5 Features


the avalanche energy rating (Eas) is 522 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 600V voltage
single MOSFETs transistor is 165 mΩ
a 600 V drain to source voltage (Vdss)


IXKP24N60C5 Applications


There are a lot of IXYS
IXKP24N60C5 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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